Session 2A Magnetic field microsensor based on GaAs MESFET W. Kordalski, B. Boratyński, M. Panek, B. Sciana, I. Zborowska-Lindert, M. Tłaczała Simulation of tunneling current in GaN Schottky diodes J. Osvald The influence of acceptor traps on the electrical properties of AlGaN/GaN HEMT transistors P. Pinteš, J. Racko, D. Donoval, J. Breza Identification of dominant defects in nitrogen-doped czochralski-grown silicon using capacitance measurement techniques M. Ťapajna, Ľ. Stuchlíková, J. Bobula, L. Harmatha Investigation of Al[0.3]Ga[0.7]N/GaN Schottky diodes properties M. Florovič, D. Donoval, F. Uherek, J. Škriniarová, P. Kordoš, J. Kováč, V. Řeháček, I. Hotový, M. Michalka Double Deep level transient spectroscopy of Al34Ga66 As/GaAs single-quantum-well structures Ľ. Stuchlíková, M. Paluga, J. Pecháček, L. Harmatha, O. Csabay Laser beam cutting of sapphire-GaN wafers J. Bruncko, M. Michalka Wet chemical etching of n-GaN with UV-source J. Škriniarová, J. Serbák, J. Kováč