Session 2(A) P. Benko, M. Ťapajna, A. Paskaleva, E. Antanassova, K. Fröhlich <![CDATA[ Measurement of electrical properties on MOS structure with Ta<sub>2</sub>O<sub>5</sub> gate dielectric layer and Ru-based gate electrodes ]]> L. Harmatha, M. Mikolášek,P. Ballo, A. Vincze Optimization of selected preparation processes of MOS structures for power electronics T. Košík, J. Marek, D. Donoval, A. Chvála, A. Vrbicky Analysis of the power trench MOS transistor supported by 2-D numerical modeling and simulation M. Krajmer, D. Ďuračková, J. Racko, J. Breza, A. Grmanová Simulation of some properties of the pseudostructure of a floating gate MOS transistor E. Raschman, D. Ďuračková Digital cell for the CNN network P. Sidor, P. Bury, P. Hockicko Determination of interface trap density in mos structures using acoustoelectric response M. Žiška, L. Harmatha, O. Csabay, V. Muránsky Impact of thermal annealing on MOS structure irradiated with energetic heavy ions