Session 3(B)
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P. Boháček, F. Dubecký, P. Hubík, B. Zaťko, Š. Chromík, M. Sekáčová
New kind of quasi-ohmic metallization in semi-insulating GaAs:
Role in electrical charge transport
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J. Novák, I. Vávra, S. Hasenöhrl, J. Šoltýs, P. Štrichovanec, K. Balazsi
Influence of GaAs cap layer on the relaxation of InMnAs dots
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D. Radziewicz, B. Ściana, I. Zborowska-Lindert, D. Pucicki, M. Tłaczała
Influence of RTA on device parameters of GaAsN/GaAs MSM photodetectors
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M. Hartmanová, F. Kubel, J. Schneider, M. Jergel, F. Kundracik, P. Schlosser
<![CDATA[ Crystal structure and type of ZrO<sub>2</sub> – M<sub>2</sub>O<sub>3</sub> (M = Yb, Y, Sm) solid solutions ]]>
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D. Haško , J. Kováč , A. Šatka, J. Kováč jr., G. Hubbard, D.W.E. Allsopp
Characterisation of Nanoimprint photonic structures by AFM, SEM and spectral reflectivity measurements
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M. Ladzianský, A.Šagátová, F. Dubecký, V. Nečas
Changes in deep level states of neutron damaged Semi-insulating GaAs detectors
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J. Škriniarová
Wet etching of GaN assisted with chopped UV – source