Session 2(A) Chairman: P. Kordoš W. Macherzyński, B. Paszkiewicz, R. Paszkiewicz, M. Tłaczała Effect of annealing on electrical characteristics of platinum based schottky contacts to n-GaN layers A. Szyszka, B. Paszkiewicz, W. Macherzynski, R. Paszkiewicz, M. Tłaczała Microscale characterisation of optical and electrical parameters of UV GaN planar detectors J. Pecháèek, J. Škriniarová, L. Harmatha, J. Kováè, R. Paskiewicz, P. Kordoš, D. Donoval, M. Tlaczala Current transport in Ni/AlGaN/GaN Schottky diodes evaluated from I-V characteristics measured at high temperatures M. Floroviè, J. Kováè, J. Škriniarová, D. Donoval, P. Kordoš, R. Paszkiewicz, M. Tlaczala, T. Lalinskę, Š. Hašèík nfluence of off-state stress on electrical properties of Al0.19Ga0.81N/GaN heterostructure field effect transistor Œ. Stuchlíková, L.Harmatha, J. Šebok, M. Vallo, R. Šramatę, M. Petrus, J. Kováè, J.Benkovská, J. Škriniarová, T. Lalinskę, R. Paskiewicz, M. Tlaczala <![CDATA[ Electrical Characterization of Al<sub>0.19</sub>Ga<sub>0,81</sub>N/GaN single-quantum-well structures ]]> J. Osvald Capacitance properties of III-n heterostructures B. Boratyński, W. Macherzyński, A. DroŸdziel, K. Pyszniak Ion Implanted Ohmic Contacts to AlGaN/GaN Structures Š. Luby History and perspectives in semiconductor technology