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<title>Electrical Measurements II</title>
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<author>M. Florovič, J. Kováč, J. Škriniarová, T. Lalinský, Š. Haščík, P. Kordoš, D. Donoval, R. Kinder, M.Tomáška</author>						
<title>Electrical properties of Al0.3Ga0.7N/GaN heterostructure field effect transistor</title>
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<author>K. Rendek, A. Šatka, J. Kováč, D. Donoval</author>						
<title>Investigation of low-frequency noise in HEMT transistors</title>
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<author>W. Macherzyński, B. Paszkiewicz, R. Paszkiewicz, M. Tłaczała</author>						
<title>Ohmic contacts to n-type AlGaN/GaN heterostructures</title>
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<author>M. Varga, M. Vojs, M. Marton, L. Michalíková, M. Veselý, R. Redhammer, M. Michalka</author>						
<title>Substrate seeding by ultrasonication with diamond powder and diamond film growth</title>
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<author>M. Vojs, E. Šipoš, V. Řeháček, M. Marton, M. Varga, M. Veselý</author>						
<title>A study of bismuth-film electrodes for the determination of trace metals by anodic stripping voltammetry</title>
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