Session 3A - GaN-based heterostructures R. Morandotti, L. Razzari, M. Ferrera, D. Duchesne, M. Peccianti, A. Pasquazi, S. Chu, B. E. Little, D. J. Moss (invited lecture) Efficient wavelength conversion in novel integrated structures R. Granzner, N. Mustafa, J. Racko, M. Mikolasek, J. Breza, F. Schwierz On the coexistence of two-dimensional electron and hole gases in GaN-based heterostructures M. Florovic, P. Hronec, J. Kovac, P. Kordos, J. Skriniarova, D. Donoval Off-state stress and pulse response investigation of InAlN/GaN HFET M. Petrus, l. Stuchlikova, J. Sebok, L. Harmatha, J. Kovac, M. Nemec, J. Skriniarova Study of electrical properties of AlGaN/GaN structures by DLTS method J. Sebok, l. Stuchlikova, J. Pechacek, P. Pisecny, M. Petrus, J. Kovac, M. Nemec, L. Harmatha, J. Skriniarova Study of electrical properties of AlGaN/GaN structures by capacitance method K. Rendek, A. Satka, J. Kovac, D. Donoval Investigation of low-frequency noise in AlGaN/GaN HEMT structures under illumination J. Osvald Possibility to detect deep levels in AlGaN/GaN heterostructures by C-V measurement