Session 4A - Heterostructures and devices P. Cheben, P.J. Bock, J.H. Schmid, J. Lapointe, S. Janz, D.-X. Xu, A. Densmore, A. Delage, B. Lamontagne., M. Florjanczyk, R. Ma (invited lecture) Subwavelength silicon photonics D. Radziewicz, B. Sciana, D. Pucicki, I. Zborowska-Lindert, J. Kovac, J. Skriniarova, A. Vincze Characterization and technology of AlGaAs/GaAs phototransistor with double delta-doped base M. Mikolasek, L. Prusakova, L. Matay, V. Rehacek, J. Jakabovic, G. Vanko, M. Kotlar, L. Harmatha Determination of the conduction band offset in the a-Si:H/c-Si heterojunction structures from coplanar temperature current-voltage measurements M. Molnar, D. Donoval, J. Kovac, J. Marek, A. Chvala, P. Pribytny Analysis of electrical properties of In0.12Al0.88N/GaN HEMT transistor supported by TCAD modeling and simulation J. Rybar, A. Kosa, F. Dubecky, M. Petrus, l. Stuchlikova, J. Benkovska, L. Harmatha, P. Hrkut, D. Bacek, P. Kovac DLTS study of neutron bombarded silicon detector R. Srnanek, A. Satka, J. Kovac, P. Kordos, D. Donoval Study of stress in GaN-based transistor heterostructures J. Kravcak Influence of helical anisotropy on GMI effect in Co-based amorphous ferromagnetic microwires